document number: 93049 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 hyperfast rectifier, 8 a fred pt ? vs-8S2TH06I-M vishay semiconductors features ? hyperfast recovery time, extremely low q rr ? isolated to-220 2 pin ? high frequency pfc ccm operation ? 175 c maximum operatin g junction temperature ? low leakage current ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level description vs-8S2TH06I-M 600 v series are the state of the art tandem hyperfast recovery rect ifiers: the new insulated 2 pin to-220 package provide benc hmark thermal resistance that coupled with excellent switching performance and low forward voltage drop allow this device to provide 8 a dc at 120 c case temperature. specially designed for ccm pf c application, these devices show incomparable performance in every current intensive hard switching application. optimized reverse recovery stored charge enables downsizing of boosting switch and cooling system. increased operating frequency make possible use of smaller reactive elements. cost effective pfc application is then possible with high efficiency over wide input voltage range and loading factor. the new ceramic insulated pa ckage warranty insulation up to 2 kv and features easy mounting together with not insulated parts, with minimum effect on r thjc . product summary package 2l to-220 insulated i f(av) 8 a v r 600 v v f at i f 3.1 v t rr (typ.) see recovery table t j max. 175 c diode variation doubler 1 2 2l to-220 absolute maximum ratings for both diodes parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 600 v dc forward current i f 50 % duty cycle, rect. waveforms, t c = 120 c 8 a non-repetitive peak surge current i fsm t c = 25 c 140 operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications for both diodes (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 8 a - 2.7 3.1 i f = 8 a, t j = 125 c - 2.1 2.3 i f = 8 a, t j = 150 c - 1.9 2.1 reverse leakage current i r v r = v r rated - < 1 10 a t j = 125 c, v r = v r rated - 7 50 t j = 150 c, v r = v r rated - 27 80 junction capacitance c t v r = 600 v - 10.5 - pf
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93049 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-aug-10 vs-8S2TH06I-M vishay semiconductors hyperfast rectifier, 8 a fred pt ? dynamic recovery characteristics for both diodes (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = - 50 a/s, v r = 30 v - 13 20 ns t j = 25 c i f = 8 a di f /dt = - 200 a/s v r = 390 v -1116 t j = 125 c - 23 30 peak recovery current i rrm t j = 25 c - 1.5 2.5 a t j = 125 c - 2.8 3.7 reverse recovery charge q rr t j = 25 c - 7 15 nc t j = 125 c - 35 51 thermal - mechanical specifications for both diodes parameter symbol test condit ions min. typ. max. units maximum junction and storage temperature range t j , t stg - 55 - 175 c thermal resistance, junction to case r thjc - 2.30 2.85 c/w thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.1- approximate weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case st yle 2l to-220 8s2th06i
document number: 93049 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-8S2TH06I-M hyperfast rectifier, 8 a fred pt ? vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.5 1.5 2.5 3.5 4.5 5.5 6.5 1 100 10 t j = 175 c t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 100 200 300 400 500 600 0.001 1000 1 10 100 0.1 0.01 175 c 125 c 150 c 100 c 75 c 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 100 200 300 400 500 600 1 100 10 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1000 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93049 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-aug-10 vs-8S2TH06I-M vishay semiconductors hyperfast rectifier, 8 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd +pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 50 % rated v r allowable case temperature (c) i f(av) - average forward current (a) 10 8 6 4 212 14 0 100 200 0 150 50 dc square wave (d = 50) 50 % rated v r applied see note (1) average power loss (w) i f(av) - average forward current (a) 12 10 8 6 4 214 0 20 30 0 10 15 25 5 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rms limit dc t rr (ns) di f /dt (a/s) 100 1000 1 100 10 i f = 8 a, 125 c i f = 8 a, 25 c v r = 390 v q rr (nc) di f /dt (a/s) 100 1000 1 1000 10 100 i f = 8 a, 125 c i f = 8 a, 25 c v r = 390 v
document number: 93049 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-8S2TH06I-M hyperfast rectifier, 8 a fred pt ? vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95171 part marking information www.vishay.com/doc?95170 spice model www.vishay.com/doc?95257 2 - current rating (8 = 8 a) 3 - s2 = doubler true 2 pin 4 - t = to-220 5 - h = hyperfast recovery 1 - vishay semiconductors product suffix - voltage rating (06 = 600 v) 6 - i = insulated 7 - environmental digit: -m = halogen-free, rohs compliant and terminations lead (pb)-free 8 device code 5 1 3 2 4 6 7 8 vs- 8 s2 t h 06 i -m
document number: 95171 for technical questi ons concerning discr ete products, contact: diodes-tech@vishay.com www.vishay.com revision: 24-apr-09 for technical questi ons concerning module products, contact: ind-modules@vishay.com 1 to-220-2l outline dimensions vishay high power products dimensions in millimeters and inches symbol millimeters inches min. max. min. max. a 4.420 4.720 0.174 0.186 a1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.360 0.460 0.014 0.018 c1 1.170 1.370 0.046 0.054 d 9.950 10.250 0.392 0.404 e 8.990 9.290 0.354 0.366 e1 12.550 12.850 0.494 0.506 e1 4.980 5.180 0.196 0.204 f 2.59 2.89 0.102 0.114 l 13.08 13.48 0.515 0.531 l1 3.47 3.87 0.136 0.152 ? 3.79 3.89 0.149 0.153 ? c1 a1 e a d e1 l f l1 c b e1 b 1
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